Vacuum Carrier Module, Method of Using and Process of Making the Same

ABSTRACT

A vacuum carrier module includes a substrate having at least one hole and an edge region. There is at least one support on a top surface of the substrate. Further, a gel film is adhered to the edge region of the substrate. The at least one hole fluidly connects a reservoir located above the top surface of the substrate. A method of using a vacuum carrier module includes planarizing a gel film by passing an alignment material through a hole in a substrate to contact a first surface of the gel film, positioning at least one chip on a second surface of the gel film opposite the first surface. The method further includes encasing the at least one chip in a molding material and applying a vacuum to the first surface of the gel film.

PRIORITY CLAIM AND CROSS-REFERENCE

This patent application claims priority and is a continuation of U.S.patent application Ser. No. 14/089,811, filed Nov. 26, 2013, andentitled “Vacuum Carrier Module, Method of Using and Process of Makingthe Same,” which application is hereby incorporated by reference hereinas if reproduced in its entirety.

BACKGROUND

Manufacturing a semiconductor device includes forming chips. Chips whichsupport a functionality of the semiconductor device are encased in acommon molding material. The chips are bonded to a carrier using arelease film. The molding material surrounds the chips. The combinedmolding material and chips are then separated from the carrier byprocessing the release film.

Examples of processing the release film include thermal release andultraviolet (UV) release. In thermal release processes, the release filmis heated to a temperature sufficient to reduce an adhesive strength ofthe release film and the molding material and chips are peeled off thefilm.

In UV release processes, the release film is exposed to UV radiation inorder to reduce the adhesive strength of the release film. In order forUV radiation to reach the release film, the carrier on which the releasefilm is placed is transparent to UV radiation.

BRIEF DESCRIPTION OF THE DRAWINGS

One or more embodiments are illustrated by way of example, and not bylimitation, in the figures of the accompanying drawings, whereinelements having the same reference numeral designations represent likeelements throughout. It is emphasized that, in accordance with standardpractice in the industry, various features may not be drawn to scale andare used for illustration purposes only. In fact, the dimensions of thevarious features in the drawings may be arbitrarily increased or reducedfor clarity of discussion.

FIG. 1A is a perspective view of a vacuum carrier module in accordancewith some embodiments.

FIG. 1B is a cross-sectional view of a vacuum carrier module inaccordance with FIG. 1A.

FIG. 1C is a perspective view of a vacuum carrier module in accordancewith some embodiments.

FIG. 1D is a cross-sectional view of a vacuum carrier module inaccordance with FIG. 1C.

FIG. 1E is perspective view of a vacuum carrier module in accordancewith some embodiments.

FIG. 1F is a cross-sectional view of a vacuum carrier module inaccordance with FIG. 1E.

FIG. 2 is a flow chart of a method of manufacturing a vacuum carriermodule in accordance with some embodiments.

FIGS. 3A-3C are cross-sectional views of a vacuum carrier module atvarious stages during manufacture in accordance with some embodiments.

FIG. 4 is a flow chart of a method of using a vacuum carrier module inaccordance with some embodiments.

FIGS. 5A-5D are cross-sectional views of a vacuum carrier module atvarious stages during use of the vacuum carrier module in accordancewith some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are examples and are not intended to belimiting. The making and using of illustrative embodiments are discussedin detail below. It should be appreciated; however, that the disclosureprovides many applicable inventive concepts that can be embodied in awide variety of specific contexts. In at least some embodiments, one ormore embodiment(s) detailed herein and/or variations thereof arecombinable with one or more embodiment(s) herein and/or variationsthereof.

FIG. 1A is a perspective view of vacuum carrier module 100. Vacuumcarrier module 100 includes a substrate 110. Vacuum carrier module 100further includes an edge region 120 around a periphery of substrate 110.Vacuum carrier module 100 further includes holes 130 extending throughsubstrate 110 and supports 140 over the substrate. A gel film 150extends over supports 140 and is attached at edge region 120. Holes 130extend from a bottom surface 160 of substrate 110 to a top surface 170of the substrate. Edge region 120 is a perimeter portion of top surface170. An adhesive material 180 binds gel film 150 to edge region 120. Areservoir 190 is located between gel film 150 and top surface 170. Anouter edge of reservoir 190 is defined by edge region 120. Holes 130 arein fluid communication with reservoir 190. Supports 140 are located in acenter portion 195 of substrate 110 to separate gel film 150 from thetop surface 170 of the substrate 110.

FIG. 1B is a cross-sectional view of vacuum carrier module 100 inaccordance with FIG. 1A. Vacuum carrier 110 includes edge region 120which is raised with respect to center portion 195. Adhesive material180 is over an entirety of a top surface of edge region 120. Adhesivematerial 180 binds gel film 150 to edge region 120. Supports 140 arelocated in center portion 195 of substrate 110 to separate gel film 150from top surface 170 of substrate 110. Gel film 150 and top surface 170form reservoir 190 in fluid communication with holes 130. Edge region120 defines the outer edge of reservoir 190.

Substrate 110 is used to support gel film 150 and to help definereservoir 190 for receiving an alignment material. In some embodiments,the alignment material is passed through the holes 130 into reservoir190. In some embodiments, the alignment material includes at least oneof compressed dry air (CDA), N₂, other inert gases, silicone oil, orother suitable fluids. In some embodiments, substrate 110 is a siliconcarbide (SiC) substrate, sapphire substrate, a silicon substrate, oranother suitable substrate. In some embodiments, substrate 110 includesa glass, metal, ceramic, or organic wafer. In some embodiments,substrate 110 is circular, rectangular, or other suitable shape.

An edge region 120 is defined along a periphery of the top surface 170of the substrate 110. In some embodiments, edge region 120 helps todefine reservoir 190. In some embodiments, the edge region 120 is alocation where the gel film 150 is secured to substrate 110. In someembodiments, edge region 120 is a continuous structure around theperiphery of top surface 170. In some embodiments, edge region 120 is adiscontinuous structure around the periphery of top surface 170. In someembodiments, the edge region 120 is substantially planar with a centerportion 195 of substrate 110. In some embodiments, edge region 120 israised with respect to the center portion of substrate 110. In someembodiments, at least one support 140 is formed on the edge region 120,as shown in FIG. 1D.

Hole 130 extends from the bottom surface 160 of substrate 110 to the topsurface 170 of substrate 110 into the reservoir 190 to facilitate thealignment material contacting the portion of the gel film 150 facing thetop surface of the substrate 110. In some embodiments, substrate 110comprises a single hole 130. In some embodiments, a plurality of holes130 is in substrate 110. In some embodiments, the plurality of holes 130is arranged in a regular pattern across substrate 110. In someembodiments, the plurality of holes 130 is arranged randomly acrosssubstrate 110. In some embodiments, substrate 110 includes a higherconcentration of holes 130 near the center portion of the substrate. Inother embodiments, at least one hole 130 is located in edge region 120.

Support 140 is used to separate gel film 150 from the top surface 170 ofsubstrate 110 in the center portion of the substrate. In someembodiments, at least one support 140 is located in the center portionof the substrate 110. In some embodiments, there is more than onesupport 140. In some embodiments, at least one support 140 is located inedge region 120. In some embodiments, support 140 extends above a topsurface of edge region 120. In some embodiments, the top surface of edgeregion 120 extends above support 140. In some embodiments, a top surfaceof support 140 is substantially level with the top surface of edgeregion 120. In some embodiments, each support 140 has a same height. Insome embodiments, at least one support 140 has a different height fromat least another support 140.

FIG. 1C is a perspective view of a vacuum carrier module 100′ inaccordance with some embodiments. FIG. 1D is a cross-sectional view ofvacuum carrier module 100′ in accordance with some embodiments. Vacuumcarrier module 100′ is similar to vacuum carrier module 100 (FIG. 1A).In comparison with vacuum carrier module 100, vacuum carrier module 100′includes a support 140′ over an edge region 120′. An adhesive material180′ is over a top surface of support 140′ over edge region 120′. Insome embodiments, a height of support 140′ over edge region 120′ isequal to a height of supports 140′ in a center portion 195′ of asubstrate 110′. In some embodiments, the height of support 140′ overedge region 120′ is less than a height of at least one support 140′ incenter portion 195′. In some embodiments, the height of support 140′over edge region 120′ is greater than a height of at least one support140′ in center portion 195′.

FIG. 1E is a perspective view of a vacuum carrier module 100″ inaccordance with some embodiments. FIG. 1F is a cross-sectional view ofvacuum carrier module 100″ in accordance with some embodiments. Vacuumcarrier module 100″ is similar to vacuum carrier module 100 (FIG. 1A).In comparison with vacuum carrier module 100, vacuum carrier module 100″includes a support 140″ over a center portion of the substrate 110″. Anadhesive material 180″ is over an edge region 120″. In some embodiments,a height of support 140″ over a center portion of the substrate 110″extends above the edge region.

FIG. 2 is a flow chart of a method 200 of manufacturing a substrate inaccordance with some embodiments. FIGS. 3A-3C are cross-sectional viewsof a substrate at various stages during manufacture in accordance withsome embodiments.

Method 200 begins with an operation 205 in which a first patterned layeris formed on a substrate. In some embodiments, holes defined by thepatterned layer are formed by photolithography, immersion lithography,or other suitable patterning processes. For example, in someembodiments, the patterned layer is formed by blanket depositing aphotoresist on the substrate. In some embodiments, the photoresist isdeposited using spin-on coating, physical vapor deposition (PVD),sputtering, or another suitable deposition process. The photoresistlayer is patterned using a combination of photolithography to define apattern and baking to develop the pattern in the photoresist. In someembodiments, the photoresist is a positive photoresist. In someembodiments, the photoresist is a negative photoresist. The patternedlayer includes a single layer or a multiple layer structure.

Method 200 continues with a process 210 in which, a material removingprocess 210 is applied to the substrate to remove the substrate materialthe holes defined by the patterned layer. In some embodiments, thematerial removing process includes at least one of wet etching, dryetching, laser drilling, or other suitable material removal processes.In some embodiments, the laser drilling uses a laser having a wavelengthof about 355 nanometer (nm) or less. In some embodiments, the lasersource is a neodymium-doped yttrium aluminum garnet (Nd:YAG) lasersource. In some embodiments, the source power of the laser drilling isabout 10.8 Watts or more. In some embodiments, the laser drilling has arepetition rate of about 100 KHz and a pulse duration ranging from about20 ns to about 75 ns. In some embodiments, the wet etching is performedusing an etchant which includes a solvent or a chemical. In someembodiments, the solvent includes N-Methyl-2-pyrrolidone (NMP),Propylene Glycol Monomethyl Ether (PGME), Propylene Glycol Methyl EtherAcetate (PGMEA), water, or Dimethyl sulfoxide (DMSO), in variousapplications. In some embodiments, the chemical includes acid, base,oxidant, reductant, or surfactant. In some embodiments, the acidincludes HCl, H2SO4, HNO3, HF, or phosphoric acid. In some embodiments,the base includes ammonia or Tetramethylammonium hydroxide (TMAH)a oranother suitable base. In some embodiments, the oxidant includes H2O2,HNO3, or O3. In some embodiments, the surfactant includes polyetheneoxide, polypropylene oxide, polybutylenes oxide, or polypentylene oxide,and fluoroalkylsulfonate such as PFOS. In some embodiments, the dryetching is performed using an etchant which includes acids, such ashydrochloric acid, acetic acid, citric acid, tartaric acid, oxalic acid,etc.; acidic metal salts such as ferric chloride, cupric chloride,cadmium chloride, magnesium chloride, zinc chloride, ferric nitrate,etc.; strong bases, such as sodium hydroxide, potassium hydroxide;oxidizing agents, such as sodium persulfate, sodium perborate; potassiumbichro mate, sodium peroxide, etc.

FIG. 3A is a cross-sectional view of the vacuum carrier module followingoperation 210. The vacuum carrier module of FIG. 3A is similar to vacuumcarrier module 100 (FIG. 1A). Similar elements in the vacuum carriermodule of FIG. 3A have a same reference number as in FIG. 1A increasedby 200. FIG. 3A includes holes 330 formed by the material removingprocess. In some embodiments, the vacuum carrier module of FIG. 3Aincludes a single hole 330. Holes 330 have a circular shape. In someembodiments, holes 330 have a rectangular shape or other suitable shape.

Returning to FIG. 2, method 200 continues with operation 215 in which amaterial layer is formed over the substrate. In some embodiments, thematerial layer includes silicon, glass-silicon, metal, ceramic, organic,polymer or other suitable materials. In some embodiments, the materiallayer is formed using techniques such as atomic layer deposition (ALD),physical vapor deposition (PVD), sputtering, chemical vapor deposition(CVD) or other suitable formation techniques.

Method 200 continues with operation 220 in which a second patternedlayer is formed on the material layer. The second patterned layer issimilar to the first patterned layer discussed above. In someembodiments, the second patterned layer is formed by photolithography,immersion lithography, or other suitable process. In some embodiments,the second patterned layer is formed using a same process as the firstpatterned layer. In some embodiments, the second patterned layer isformed using a different process from the first patterned layer.

Method 200 continues with operation 225 in which a material removingprocess is applied to the material layer to remove portions of thematerial layer. The portions of the material layer are removed throughopenings defined by the second patterned layer. In some embodiments, theportions of the material layer are removed using wet etching, dryetching, or other suitable material removal processes. In someembodiments, the material removal process in operation 225 is a samematerial removal process as in operation 210. In some embodiments, thematerial removal process in operation 225 is different from the materialremoval process in operation 210.

FIG. 3B is a cross-sectional view of the vacuum carrier module followingoperation 225. In comparison with FIG. 3A, FIG. 3B includes supports 340on top surface 370 of substrate 310 in the center portion 395 of thesubstrate. Supports 340 are defined by the remaining portions of thematerial layer on the substrate 310 following the material removalprocess in operation 225. In some embodiments, at least one support 340is located in the center portion 395 of the substrate 310. In someembodiments, there is more than one support 340. In some embodiments, atleast one support 340 is located in edge region 320. In someembodiments, at least one support 340 extends above a top surface 370 ofedge region 320. In some embodiments, top surface 370 of edge region 320extends above at least one support 340. In some embodiments, a topsurface of support 340 is substantially coplanar with a top surface ofedge region 320.

Support 340 is used to separate a gel film from the top surface 370 ofsubstrate 310 in the center portion of the substrate. In someembodiments, at least one support 340 is located in the center portionof the substrate 310. In some embodiments, there is more than onesupport 340. In some embodiments, at least one support 340 is located inedge region 320. In some embodiments, support 340 extends above a topsurface of edge region 320. In some embodiments, the top surface of edgeregion 320 extends above support 340. In some embodiments, a top surfaceof support 340 is substantially level with the top surface of edgeregion 320. In some embodiments, each support 340 has a same height. Insome embodiments, at least one support 340 has a different height fromat least another support 340.

Returning to FIG. 2, method 200 continues with operation 230 in which anadhesive material is applied to at least a portion of an edge region. Insome embodiments, the adhesive material is applied on at least twolocations of the edge region. In some embodiments, the adhesive materialis applied on an entirety of the edge region of the substrate. In someembodiments, the adhesive material is applied on less than the entiretyof the edge region of the substrate. In some embodiments, the adhesivematerial is applied on all raised or flat edge regions of the carrier.In some embodiments, the adhesive material is applied on less than alledges that are either raised or flat. In some embodiments, the adhesivematerial is applied to at least one support formed by the materiallayer. In some embodiments, the adhesive material includes a polymercomposite, an epoxy, or other suitable adhesive material.

FIG. 3C is a cross-sectional view of the vacuum carrier module followingoperation 230. In comparison with FIG. 3B, FIG. 3C includes an adhesivematerial 345 on the top surface of support 340 located in edge region320. In some embodiments, adhesive material 345 is directly on substrate310 in edge region 320. In some embodiments, adhesive material 345 iscontinuously formed along an entirety to edge region 320. In someembodiments, adhesive material 345 is selectively deposited alongportions of edge region 320. In some embodiments, adhesive material 345is deposited on at least one support 340 in a center portion ofsubstrate 310.

Returning to FIG. 2, method 200 continues with operation 235 in which agel film is attached to the adhesive material. In some embodiments, thegel film is of any suitable shape or size. In some embodiments, the gelfilm comprises silicone or polymer based compounds. In some embodiments,the gel film comprises WF Film® made by Gel-Pak. Following operation235, the vacuum carrier module resembles vacuum carrier module 100 (FIG.1D), in some embodiments.

One of ordinary skill in the art would recognize that operations areadded or removed from method 200, in some embodiments. One of ordinaryskill in the art would also recognize that an order of operations inmethod 200 is able to be changed, in some embodiments.

FIG. 4 is a flow chart of a method 400 of using a vacuum carrier modulein accordance with some embodiments and FIGS. 5A-5 D are schematiccross-sectional views of a vacuum carrier module at various stagesduring a method of use in accordance with some embodiments.

Referring to FIG. 4, in operation 410 an upward pressure is exerted on agel film by an aligning material through the hole(s). In someembodiments, such upward pressure is exerted by passing the alignmentmaterial through the hole(s) to help ensure that the gel film remainsplanar. In some embodiments, such pressure is exerted using a pressureexerting tool. In some embodiments, the pressure exerting tool comprisesa pump, a compressor or other suitable pressurizing tools. In someembodiments, an amount of pressure exerted is controlled using a controlsystem. In some embodiments, the control system is configured toselectively activate the pressure exerting tool. In some embodiments,the control system is configured to monitor the pressure exerted usingpressure sensors located outside of the vacuum carrier module. In someembodiments, the control system is configured to adjust the amount ofpressure exerted in response to a weight applied to a top surface of thegel film. The aligning material comprises materials which are notreactive with the gel film. The alignment material does not reach aphase transition temperature at a temperature at which a moldingmaterial is placed on top of the gel film. In some embodiments, thealignment material comprises compressed dry air (CDA), N₂, other inertgases, silicone oil, or other suitable fluids. An upward pressureexerted by the aligning material from a bottom portion through the topportion of the hole(s) help(s) the gel film in being planar with respectto the substrate. The upward pressure exerted by the aligning materialis lower than an adhesive strength between the gel film and thesubstrate so that the gel film remains fixed on top of the substrate.

In operation 415 at least one chip is placed on top of the gel film. Insome embodiments, the upward pressure of the aligning material isincreased to compensate for an increased downward force resulting from aweight of the chips on the gel film. In some embodiments, the upwardpressure of the aligning material remains constant. Further, in someembodiments, the upward pressure of the aligning material is continuousthroughout until the molding material is cured.

FIG. 5A is a cross-sectional view of the vacuum carrier module followingoperation 415. FIG. 5A includes a vacuum carrier module similar tovacuum carrier module 100 (FIG. 1A). Similar elements have a samereference number increased by 400. Two chips 504 are located on gel film550. In some embodiments, one chip 504 is placed on gel film 550. Insome embodiments, more than two chips 504 are placed on gel film 550. Analignment material 516 is applied to a reservoir 590 through holes 530in substrate 510.

Returning to FIG. 4, in operation 420 a molding material 506 is disposedover the gel film 550 and cured. In some embodiments, a two-step moldingprocess is used wherein a separate underfill material is first injectedbeneath the gel film and the substrate followed by over-molding with asecond molding material to encapsulate and fill spaces between the gelfilm and the substrate. The underfill material is any suitable liquidepoxy, deformable gel, silicone rubber, or other suitable material usedfor underfilling compounds. In some embodiments, the process used is anysuitable method known in the art, such as spinning, chemical vapordeposition (CVD) and plasma enhanced chemical vapor deposition (PECVD).In some embodiments, the molding material is cured using heat orultraviolet (UV) radiation for a period of time sufficient to harden themolding material. In some embodiments, the upward pressure of thealigning material remains constant during operation 420. Further, insome embodiments, the upward pressure of the aligning material iscontinuous from the previous process until the molding material iscured, while in additional embodiments, the upward pressure of thealigning material is stopped for a period of time after the at least onechip is placed on top of the gel film and before the molding material isplaced on top of the gel film.

FIG. 5B is a cross-sectional view of the vacuum carrier module followingoperation 420. In comparison with FIG. 5A, FIG. 5B includes a moldingmaterial 506 disposed over the chips 504 and on top of the gel film 550.

Returning to FIG. 4, in operation 425 a negative pressure or a vacuum iscreated through the hole(s) of the substrate to detach the gel film fromthe molding material. Such negative pressure or a vacuum has asufficient magnitude to detach the gel film from the cured moldingmaterial. In some embodiments, the negative pressure or a vacuum whichis created through the hole(s) is continuous from after the moldingmaterial is cured up until the molding material is detached in operation430. In some embodiments, the negative pressure or the vacuum isgenerated using a pump, or another suitable pressure inducing tool. Insome embodiments, a control system is used in generating adequatenegative pressure. In some embodiments, the control system is used toregulate a magnitude of the negative pressure or the vacuum.

FIG. 5C is a cross-sectional view of the vacuum carrier module followingoperation 425. In comparison with FIG. 5B, FIG. 5C includes a vacuum 518exerted on the gel film 550 through the holes 530 at the bottom portionof the substrate 510. Vacuum 518 results in reduced surface area betweenthe gel film 550 and molding material 506. The pressure also results inthe gel film 550 not being planar. Supports 540 help to prevent gel film550 from being pulled into holes 530 by vacuum 518 to reduce a risk ofdamage to the gel film.

Referring to FIG. 4, method 400 continues with operation 430 in whichthe molding material is detached from the gel film. In some embodiments,the molding material is peeled off. In some embodiments, the moldingmaterial is removed. After the detachment of the molding material fromthe gel film, gel film 550 retains a shape such that the gel film isplanar in accordance with the carrier substrate due to the inherentelasticity of the gel film. The gel film is then reused by placingadditional chip(s) and method 400 is repeated.

FIG. 5D is a cross-sectional view of the vacuum carrier module followingoperation 430. In comparison with FIG. 5C, FIG. 5D includes the gel film550 returned to the original shape and the molding material 506 beingseparated from the gel film. In some embodiments, the molding material506 is removed.

Various embodiments of the present disclosure involve methods to preventchips 504 and/or the molding material 506 from collecting residue aftera molding process. As previously discussed, a gel film 550 is used onsubstrate 510 during the molding process. The gel film has an elasticproperty that allows such gel film to be reusable. While moldingmaterial 506 is in contact with the gel film 550, a non-adhesive natureof such contact combined with the vacuum release, as in FIG. 5C, helpsto prevent residue from the gel film from being left behind on themolding material and/or any other part of the chip(s).

One aspect of this description relates to a vacuum carrier module. Thevacuum carrier module includes a substrate having at least one hole andan edge region. There is at least one support on a top surface of thesubstrate. Further, a gel film is adhered to the edge region of thesubstrate. The at least one hole fluidly connects a reservoir locatedabove the top surface of the substrate.

Another aspect of this description relates to a method of using a vacuumcarrier module. The method includes planarizing a gel film by passing analignment material through a hole in a substrate to contact a firstsurface of the gel film, positioning at least one chip on a secondsurface of the gel film opposite the first surface. The method furtherincludes encasing the at least one chip in a molding material andapplying a vacuum to the first surface of the gel film.

Still another aspect of this description relates to a method of makingvacuum carrier module. The method including forming at least one hole ina substrate, forming at least one support on a top surface of thesubstrate, and fixing a gel film to an edge region of the substrate. Thegel film is positioned over the at least one support.

In an embodiment, a method includes disposing a gel film over asubstrate; flowing an alignment material into a reservoir disposedbetween the gel film and the substrate, wherein flowing the alignmentmaterial into the reservoir planarizes a surface of the gel filmopposite the substrate; after flowing the alignment material into thereservoir, placing a semiconductor die on the gel film; and packagingthe semiconductor die while the semiconductor die is disposed on the gelfilm.

In an embodiment, a method includes physically supporting a gel filmover a substrate using a plurality of supports disposed between the gelfilm and the substrate; flowing an alignment material into a reservoirbetween the gel film and the substrate; packaging a semiconductor die onthe gel film to form a device package while the alignment material is inthe reservoir; and applying a vacuum to remove at least a portion of thealignment material from the reservoir, wherein applying the vacuumreduces a surface area of an interface between the device package andthe gel film by conforming the gel film along sidewalls of the pluralityof supports.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

What is claimed is:
 1. A method of using a vacuum carrier module, themethod comprising: planarizing a gel film by flowing an alignmentmaterial through a hole in a substrate to contact a first surface of thegel film, wherein the gel film is adhered to an edge region of thesubstrate; positioning at least one chip on a second surface of the gelfilm opposite the first surface; encasing the at least one chip in amolding material; and after encasing the at least one chip, applying avacuum to the first surface of the gel film.
 2. The method of claim 1,wherein a plurality of supports physically separates the gel film fromthe substrate while flowing the alignment material through the hole. 3.The method of claim 2, wherein applying the vacuum to the first surfaceof the gel film conforms the gel film along sidewalls of the pluralityof supports.
 4. The method of claim 1, wherein planarizing the gel filmcomprises passing the alignment material through the hole at a pressureless than an adhesive strength between the gel film and the substrate.5. The method of claim 1, wherein encasing the at least one chipcomprises applying the molding material which is non-reactive with thegel film.
 6. The method of claim 1, further comprising removing theencased at least one chip from the gel film.
 7. The method of claim 1,wherein applying the vacuum to the first surface of the gel filmphysically separates at least a portion of the gel film from the encasedat least one chip.
 8. A method comprising: disposing a gel film over asubstrate; flowing an alignment material into a reservoir disposedbetween the gel film and the substrate, wherein flowing the alignmentmaterial into the reservoir planarizes a surface of the gel filmopposite the substrate; after flowing the alignment material into thereservoir, placing a semiconductor die on the gel film; and packagingthe semiconductor die while the semiconductor die is disposed on the gelfilm.
 9. The method of claim 8, wherein the alignment material comprisescompressed dry air (CDA), N₂, an inert gas, silicone oil, or acombination thereof.
 10. The method of claim 8, wherein flowing thealignment material comprises flowing the alignment material at an upwardpressure lower than an adhesive strength between the gel film and thesubstrate.
 11. The method of claim 8, further comprising increasing anupward pressure exerted by the alignment material in response to placingthe semiconductor die on the gel film.
 12. The method of claim 8,wherein packaging the semiconductor die comprises encapsulating thesemiconductor die in a molding material.
 13. The method of claim 12,further comprising maintaining a continuous upward pressure exerted bythe alignment material from flowing the alignment material into thereservoir through curing the molding material.
 14. The method of claim 8further comprising after packaging the semiconductor die, applying anegative pressure to a surface of the gel film opposite the packagedsemiconductor die, wherein applying the negative pressure releases thegel film from the packaged semiconductor die.
 15. The method of claim14, wherein the gel film is physically supported by a plurality ofsupports disposed between the substrate and the gel film, and whereinthe plurality of supports at least partially prevent the gel film frombeing pulled into a hole extending through the substrate while applyingthe negative pressure to the surface of the gel film opposite thepackaged semiconductor die.
 16. A method comprising: physicallysupporting a gel film over a substrate using a plurality of supportsdisposed between the gel film and the substrate; flowing an alignmentmaterial into a reservoir between the gel film and the substrate;packaging a semiconductor die on the gel film to form a device packagewhile the alignment material is in the reservoir; and applying a vacuumto remove at least a portion of the alignment material from thereservoir, wherein applying the vacuum reduces a surface area of aninterface between the device package and the gel film by conforming thegel film along sidewalls of the plurality of supports.
 17. The method ofclaim 16, wherein flowing the alignment material into the reservoirplanarizes a surface of the gel film opposite the substrate.
 18. Themethod of claim 16, wherein flowing the alignment material comprisesadjusting an upward pressure exerted by the alignment material on thegel film in response to a weight applied to a surface of the gel filmopposite the substrate.
 19. The method of claim 18, wherein adjustingthe upward pressure exerted by the alignment material comprisesincreasing the upward pressure exerted by the alignment material inresponse to placing the semiconductor die on the gel film.
 20. Themethod of claim 18, wherein the alignment material comprises an inertgas, silicone oil, or a combination thereof, and wherein the gel filmcomprises silicone or a polymer based compound.